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STP24N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP24N60M2 Datasheet PDF : 22 Pages
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STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
ISDM (1) Source-drain current (pulsed)
-
VSD(2) Forward on voltage
ISD = 18 A, VGS = 0
-
18 A
72 A
1.6 V
trr
Reverse recovery time
- 332
ns
Qrr Reverse recovery charge
ISD = 18 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 18)
-
4
nC
IRRM Reverse recovery current
-
24
A
trr
Reverse recovery time
ISD = 18 A, di/dt = 100 A/µs
-
450
ns
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
- 5.5
nC
IRRM Reverse recovery current
(see Figure 18)
-
25
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID023964 Rev 4
5/22
 

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