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TIP102 View Datasheet(PDF) - Power Innovations

Part Name
Description
Manufacturer
TIP102
Power-Innovations
Power Innovations Power-Innovations
TIP102 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TIP100, TIP101, TIP102
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = 30 mA
(see Note 5)
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 6 mA
IB = 80 mA
VCE = 4 V
IE = 8 A
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = 3 A
IC = 8 A
IC = 3 A
IC = 8 A
IC = 8 A
IB = 0
TIP100
60
TIP101
80
TIP102
100
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
(see Notes 5 and 6)
(see Notes 5 and 6)
1000
200
(see Notes 5 and 6)
(see Notes 5 and 6)
50
50
50
50
50
50
8
20000
2
2.5
2.8
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
µA
mA
V
V
V
thermal characteristics
RθJC
RθJA
CθC
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
Thermal capacitance of case
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
0.9
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC = 8 A
VBE(off) = -5 V
IB(on) = 80 mA
RL = 5
IB(off) = -80 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
35
ns
350
ns
1.8
µs
2.45
µs
PRODUCT INFORMATION
2
 

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