JMnic
Silicon PNP Power Transistors
Product Specification
2SA1006 2SA1006A 2SA1006B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBEsat Base-emitter saturation voltage
IC=-0.5A ;IB=-50mA
ICBO
Collector cut-off current
VCB=-150V ;IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-5mA ; VCE=-5V
hFE-2
DC current gain
IC=-150mA ; VCE=-5V
Cob
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
fT
Transition frequency
IC=-100mA ; VCE=10V
hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
MIN TYP. MAX UNIT
-1.0
V
-1.5
V
-1
μA
-1
μA
30
60
320
45
pF
80
MHz
2