DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BCP56-16/T1 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BCP56-16/T1
Philips
Philips Electronics Philips
BCP56-16/T1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
NPN medium power transistors
Product specification
BCP54; BCP55; BCP56
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
94
K/W
13
K/W
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBE
fT
hh----FF---EE---12-
collector cut-off current
IE = 0; VCB = 30 V
100 nA
IE = 0; VCB = 30 V; Tj = 125 °C
10 µA
emitter cut-off current
IC = 0; VEB = 5 V
100 nA
DC current gain
IC = 5 mA; VCE = 2 V
25
IC = 150 mA; VCE = 2 V
63
250
IC = 500 mA; VCE = 2 V
25
DC current gain
IC = 150 mA; VCE = 2 V
BCP55-10; 56-10
63
160
BCP54-16; 55-16; 56-16
100
250
collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA
500 mV
base-emitter voltage
IC = 0.5 A; VCE = 2 V
1
V
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
130
MHz
DC current gain ratio of the
complementary pairs
IC= 150 mA; VCE= 2 V
1.6
1999 Apr 08
3
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]