BU2522AF View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

BU2522AF

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU2522AF

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter breakdown voltage IC=0.1A ;IB=0;L=25mH

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=6.0A ;IB=1.2A

VBEsat

Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=6.0A ;IB=1.2A

VCE=BVCES; VBE=0

Tj=125

VEB=7.5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

CC

Collector capacitance

IE=0 ; VCB=10V; f=1MHz

MIN TYP. MAX UNIT

800

V

7.5

13.5

V

5.0

V

1.3

V

0.25

2.0

mA

0.1

mA

10

5

7

8

115

pF

2

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