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FDS6890A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6890A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
November 1999
FDS6890A
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Applications
DC/DC converter
Motor drives
Features
7.5 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 V
RDS(ON) = 0.022 @ VGS = 2.5 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D2
D2
5
D1
D1
6
G2
7
S2
G1
8
SO-8 pin 1 S1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
4
3
2
1
Ratings
20
±8
7.5
20
2.0
1.6
1.0
0.9
-55 to +150
78
40
90
Units
V
V
A
W
°C
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6890A
FDS6890A
13
Tape Width
12mm
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS6890A Rev. C
 

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