IRF1840G View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRF1840G Datasheet PDF : 8 Pages
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IRFI840G, SiHFI840G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.8 Ab
VDS = 50 V, ID = 2.8 Ab
MIN. TYP. MAX. UNIT
500
-
-
V
-
0.78
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.85
Ω
3.7
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
1300
-
-
200
-
pF
-
39
-
-
12
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
-
VGS = 10 V
ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 8.0 A,
-
RG = 9.1Ω, RD= 31 Ω,
see fig. 10b
-
-
Between lead,
6 mm (0.25") from
D
-
package and center of
G
die contact
-
S
-
67
-
10
nC
-
34
14
-
22
-
ns
55
-
21
-
4.5
-
nH
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
-
-
4.6
A
G
-
-
18
S
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.6 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
340
680
ns
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/µsb
Qrr
-
1.8
2.6
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91161
S09-0011-Rev. A, 19-Jan-09
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