BR34L02-W View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
BR34L02-W Datasheet PDF : 17 Pages
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●ABSOLUTE MAXIMUM RATING (Ta=25℃)
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
-0.3～+6.5
V
Power Dissipation
Pd
300(SSOP-B8) *1
330(TSSOP-B8) *2
mW
Storage Temperature
Tstg
-65～+125
℃
Operating Temperature
Topr
-40～+85
℃
Terminal Voltage
-
-0.3～VCC+0.3
V
※ Degradation is done at 3.0mW/℃(*1), 3.3mW/℃(*2) for operation above 25℃
●RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
1.7～5.5
V
Input Voltage
ＶIN
0～VCC
V
●MEMORY CELL CHARACTERISTICS（Ta=25℃, VCC=1.7～5.5V）
Parameter
Write / Erase Cycle *1
Data Retention
*1
Specification
Min.
Typ.
1,000,000
－
40
－
Max.
－
－
Unit
Cycles
Years
*1:Not 100% TESTED
●DC OPERATING CHARACTERISTICS （Unless otherwise specified Ta=-40～85℃, VCC=1.7～5.5V）
Parameter
Specification
Symbol
Unit
Min. Typ. Max.
Test Condition
"H" Input Voltage 1
VIH1 0.7 VCC －
－
V 2.5V≦VCC≦5.5V
"L" Input Voltage 1
VIL1 －
－ 0.3 VCC V 2.5V≦VCC≦5.5V
"H" Input Voltage 2
VIH2 0.8 VCC －
－
V 1.7V≦VCC＜2.5V
"L" Input Voltage 2
VIL2 －
－ 0.2 VCC V 1.7V≦VCC＜2.5V
"L" Output Voltage 1
VOL1 －
－
0.4
V IOL=3.0mA，2.5V≦VCC≦5.5V（SDA）
"L" Output Voltage 2
VOL2 －
－
0.2
V IOL=0.7mA，1.7V≦VCC＜2.5V（SDA）
Input Leakage Current 1 ILI1
-1
－
1
μA VIN=0V～VCC（A0,A1,A2,SCL）
Input Leakage Current 2 ILI2
-1
－
15
μA VIN=0V～VCC（WP）
Output Leakage Current ILO
-1
－
1
μA VOUT=0V～VCC (SDA)
Operating Current
VCC =5.5V,fSCL=400ｋHz，tWR=5ms
ICC1 －
－
2.0
mA
Byte Write
Page Write
Write Protect
VCC =5.5V,fSCL=400ｋHz
ICC2 －
－
0.5
mA
Random Read
Current Read
Sequential Read
Standby Current
ISB
－
－
2.0
μA
VCC =5.5V,SDA,SCL= VCC
A0,A1,A2=GND,WP=GND
○ This product is not designed for protection against radioactive rays.
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