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25TTS08PBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
25TTS08PBF Phase Control SCR, 25 A Vishay
Vishay Semiconductors Vishay
25TTS08PBF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
25TTS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 25 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IRMS
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
I2t
VTM
rt
VT(TO)
IRM/IDM
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
TC = 93 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
16 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A
Anode supply = 6 V, resistive load
VALUES
UNITS
TYP. MAX.
16
25
A
300
350
450
A2s
630
6300
A2s
1.25
V
12.0
mΩ
1.0
V
0.5
10
mA
-
100
200
500
V/µs
150
A/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate
voltage to trigger
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TEST CONDITIONS
TJ = 125 °C
VALUES
0.9
4
110
UNITS
µs
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94385
Revision: 11-Aug-08
Direct download click here

 

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