STP18NM60N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP18NM60N

N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK

STMicroelectronics 

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 13 A, VGS=0

13 A

-

52 A

-

1.6 V

trr

Reverse recovery time

ISD =13 A, di/dt =100 A/µs,

300

ns

Qrr Reverse recovery charge

VDD = 60 V

- 4.0

µC

IRRM Reverse recovery current

(see Figure 20)

25

A

trr

Reverse recovery time

VDD = 60 V

360

ns

Qrr Reverse recovery charge

di/dt =100 A/µs, ISD = 13 A - 4.5

µC

IRRM Reverse recovery current

Tj = 150°C (see Figure 20)

25

A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 15868 Rev 4

5/21

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