STU3N62K3 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STU3N62K3 Datasheet PDF : 19 Pages
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Electrical characteristics
2
Electrical characteristics
STB/D/F/P/U3N62K3
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.4 A
Min. Typ. Max. Unit
620
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
2.2 2.5 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 1.4 A
2.1
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
385
55
6
pF
pF
pF
COSS
(1)
eq
Equivalent output
capacitance
VGS = 0, VDS = 0 to 496 V
32.3
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
10
Ω
Qg
Total gate charge
VDD = 496 V, ID = 2.7 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 17)
13
nC
2.5
nC
7.5
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 310 V, ID =1.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min.
Typ.
9
6.8
22
15.6
Max Unit
ns
ns
ns
ns
4/19
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