STP6N25FI View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP6N25FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

TYPE

STP6N25

STP6N25FI

STP6N25

STP6N25FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

PRELIMINARY DATA

VDSS

R DS( on)

ID

250 V

< 1Ω

6A

250 V

< 1Ω

4A

s TYPICAL RDS(on) = 0.7 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s HIGH SPEED SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s MOTOR CONTROL, AUDIO AMPLIFIERS

s INDUSTRIAL ACTUATORS

s DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

s PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP

BALLASTS

3

2

1

TO-220

3

2

1

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

P ar amete r

VD S Drain-source Voltage (VGS = 0)

VDG R Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at T c = 25 oC

ID

Drain Current (continuous) at T c = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

June 1993

Val ue

STP6N25

S T P6 N2 5F I

250

250

± 20

6

4

4

2.6

24

24

70

35

0. 56

0. 28



2000

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

oC

oC

1/10

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