IRLB8748PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRLB8748PBF

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

International Rectifier 

IRLB8748PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

Drain-to-Source Breakdown Voltage

30 ––– ––– V VGS = 0V, ID = 250µA

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

–––

21

3.8

5.5

–––

4.8

6.8

mV/°C Reference to 25°C, ID = 1mA

ee mΩ

VGS = 10V, ID = 40A

VGS = 4.5V, ID = 32A

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

1.35 1.8 2.35 V

––– -7.1 ––– mV/°C VDS = VGS, ID = 50µA

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 150

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

196 ––– –––

––– 15 23

––– 3.6 –––

––– 2.2 –––

––– 5.9 –––

––– 3.9 –––

––– 8.1 –––

––– 11 –––

S VDS = 15V, ID = 32A

VDS = 15V

nC VGS = 4.5V

ID = 32A

nC VDS = 16V, VGS = 0V

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

––– 2.0 3.5

––– 14 –––

e Ω

VDD = 15V, VGS = 4.5V

––– 96 ––– ns ID = 32A

––– 16 –––

RG = 1.8Ω

––– 34 –––

Ciss

Input Capacitance

––– 2139 –––

VGS = 0V

Coss

Output Capacitance

––– 464 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 199 –––

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

Ù Avalanche Current

EAR

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

114

32

7.5

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

f ––– –––

92

––– –––

370

––– ––– 1.0

MOSFET symbol

A showing the

integral reverse

e p-n junction diode.

V TJ = 25°C, IS = 32A, VGS = 0V

––– 23

––– 39

35

59

e ns TJ = 25°C, IF = 32A, VDD = 15V

nC di/dt = 200A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

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