2SD1010-T View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD1010-T Datasheet PDF : 2 Pages
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Transistor
PC — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
8
IE=0
7
f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage VCB (V)
IC — VCE
160
Ta=25˚C
140
120
IB=100µA
100
90µA
80µA
70µA
80
60µA
50µA
60
40µA
30µA
40
20µA
20
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1800
1500
hFE — IC
VCE=10V
1200
900
600
Ta=75˚C
25˚C
–25˚C
300
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NV — IC
100 VCE=10V
GV=80dB
Function=FLAT
80 Ta=25˚C
Rg=100kΩ
60
22kΩ
40
5kΩ
20
0
0.01 0.03
0.1
0.3
1
Collector current IC (mA)
2SD1010
IC — VBE
120
25˚C
100
Ta=75˚C –25˚C
VCE=10V
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
250
VCB=10V
Ta=25˚C
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
NV — VCE
100
Rg=100kΩ
80
60
22kΩ
40
5kΩ
20
IC=1mA
GV=80dB
Function=FLAT
0
Ta=25˚C
1
3
10
30
100
Collector to emitter voltage VCE (V)
2
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