FQP27N25 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP27N25 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number
FQP27N25
Top Mark
FQP27N25
Package Packing Method
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
250 --
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C -- 0.29
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
1
10
100
-100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 12.75 A
VDS = 50 V, ID = 12.75 A
3.0 --
5.0
-- 0.083 0.11
--
24
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1900 2450
-- 360 470
--
45
60
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125 V, ID = 27 A,
RG = 25 Ω
--
32
75
-- 270 550
--
80
170
(Note 4)
--
120
250
VDS = 200 V, ID = 27 A,
--
50
65
VGS = 10 V
-- 12.5
--
(Note 4) --
26
--
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25.5 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 27 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 1.5 mH, IAS = 25.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 27 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
25.5
A
--
--
102
A
--
--
1.5
V
-- 220
--
ns
-- 1.8
--
μC
©2000 Fairchild Semiconductor Corporation
2
FQP27N25 Rev. C1
www.fairchildsemi.com
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