FQP27N25 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP27N25 Datasheet PDF : 8 Pages
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FQP27N25
N-Channel QFET® MOSFET
250 V, 25.5 A, 110 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
November 2013
Features
• 25.5 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V,
ID = 12.75 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 45 pF)
• 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQP27N25
250
25.5
16.2
102
± 30
600
25.5
18
5.5
180
1.43
-55 to +150
300
FQP27N25
0.7
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
1
FQP27N25 Rev. C1
www.fairchildsemi.com
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