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BU2507 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BU2507
Philips
Philips Electronics Philips
BU2507 Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.3. Switching times test circuit.
hFE
100
VCE = 1 V
10
Product specification
BU2507AF
BU2507AF/X
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10 IC / A 100
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
100
VCE = 5 V
BU2507AF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 IC / A 100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU2507AF/X
IC/IB = 3
IC/IB = 4
IC/IB = 5
0.01
0.1
1
10 IC / A
100
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.100
 

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