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BU2507DF View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BU2507DF
Philips
Philips Electronics Philips
BU2507DF Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2507DF
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
-
-
TYP.
-
-
35
TYP.
22
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
MAX. UNIT
2500 V
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
VCEOsust
Collector-emitter sustaining voltage
IEBO
BVEBO
Rbe
VCEsat
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltages
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
IB = 0 A; IC = 100 mA;
L = 25 mH
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IC = 4 A; IB = 0.8 A
VBEsat
hFE
hFE
VF
Base-emitter saturation voltage
DC current gain
Diode forward voltage
IC = 4 A; IB = 0.8 A
IC = 1 A; VCE = 5 V
IC = 4 A; VCE = 5 V
IF = 4 A
MIN.
-
-
700
-
7.5
-
-
-
-
5
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
-
V
160
-
mA
13.5 -
V
45
-
-
5
V
-
1.1
V
14
-
7
9
1.7 2.0
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 4 A; IB(end) = 0.7 A; LB = 6 µH;
-VBB = 4 V
TYP. MAX. UNIT
68
-
pF
5.0 6.0 µs
0.25 0.5 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
 

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