DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

STP10NM60ND View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP10NM60ND Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STD10NM60ND, STF10NM60ND, STP10NM60ND
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC =125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 4 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±100 nA
3
4
5
V
0.57 0.6
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
577
pF
-
32.4
-
pF
1.76
pF
Equivalent
Coss
(1)
eq
capacitance time
related
VDS = 0 to 480 V, VGS = 0
-
138
- pF
Rg
Gate input resistance f=1 MHz open drain
Qg
Total gate charge
VDD = 480 V, ID = 8 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
-
6
-
20
nC
-
4.3
- nC
11.6
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min. Typ. Max Unit
9.2
10
-
32
9.8
ns
ns
-
ns
ns
4/19
Doc ID 18467 Rev 2
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]