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STD10NM60ND View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD10NM60ND Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD10NM60ND, STF10NM60ND
STP10NM60ND
N-channel 600 V, 0.57 , 8 A, DPAK, TO-220FP, TO-220
FDmesh™ II Power MOSFET (with fast diode)
Features
Order codes
STD10NM60ND
STF10NM60ND
STP10NM60ND
VDSS RDS(on)
@TJmax max.
650 V < 0.6
ID PTOT
70 W
8 A 25 W
70 W
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt avalanche capabilities
Applications
Switching applications
Description
This FDmesh™ II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
Marking
STD10NM60ND
STF10NM60ND
10NM60ND
STP10NM60ND
Package
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
November 2011
Doc ID 18467 Rev 2
1/19
www.st.com
19
 

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