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STP3NC60 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP3NC60
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STP3NC60 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP3NC60
STP3NC60FP
N-CHANNEL 600V - 3.3- 3A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC60
600 V < 3.6
3A
STP3NC60FP
600V
< 3.6
3A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2003
Value
Unit
STP3NC60 STP3NC60FP
600
V
600
V
±30
V
3
3(*)
A
1.9
1.9(*)
A
12
12(*)
A
80
40
W
0.64
0.32
W/°C
3.5
V/ns
-
2000
–60 to 150
°C
150
°C
(1)ISD 3A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
1/9
 

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