STD13003-1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
| STD13003-1 Datasheet PDF : 0 Pages | |||
STD13003
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEV Collector Cut-off
VCE = 700V
Current (VBE = -1.5V) VCE = 700V
Tj = 125oC
1
mA
5
mA
BVEBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IE = 10 mA
IC = 10 mA
L = 25 mH
IC = 0.5 A
IC = 1 A
IC = 1.5 A
9
400
IB = 0.1 A
IB = 0.25 A
IB = 0.5 A
18
V
V
0.5
V
1
V
3
V
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IB = 0.1 A
IB = 0.25 A
1
V
1.2
V
hFE∗ DC Current Gain
IC = 0.5 A
VCE = 2 V
Group A
8
20
Group B
15
35
IC = 1 A
VCE = 2 V
5
25
RESISTIVE LOAD
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC = 1 A
IB1 = 0.2 A
Tp= 25 µs
VCC = 125 V
IB2 = -0.2 A
1
µs
4
µs
0.7
µs
INDUCTIVE LOAD
ts
Storage Time
IC = 1 A
VBE = -5 V
Vclamp = 300 V
IB1 = 0.2 A
L = 50 mH
0.8
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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