DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

1N5817 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
1N5817
ST-Microelectronics
STMicroelectronics ST-Microelectronics
1N5817 Datasheet PDF : 5 Pages
1 2 3 4 5
®
1N581x
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj
VF (max)
1A
40 V
150°C
0.45 V
FEATURES AND BENEFITS
n VERY SMALL CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n EXTREMELY FAST SWITCHING
n LOW FORWARD VOLTAGE DROP
n AVALANCHE CAPABILITY SPECIFIED
DO41
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO41 these devices
are intended for use in low voltage, high frequency
inverters, free wheeling, polarity protection and
small battery chargers.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
PARM
Tstg
Tj
dV/dt
Parameter
Value
1N5817 1N5818 1N5819
Repetitive peak reverse voltage
20
30
40
RMS forward current
10
Average forward current
TL = 125°C
1
δ = 0.5
Surge non repetitive forward tp = 10 ms
25
current
Sinusoidal
Repetitive peak avalanche
tp = 1µs Tj = 25°C 1200 1200 900
power
Storage temperature range
- 65 to + 150
Maximum operating junction temperature *
150
Critical rate of rise of reverse voltage
10000
Unit
V
A
A
A
W
°C
°C
V/µs
* : dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j a)
July 2003 - Ed: 4A
1/5
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]