SPI08N80C3 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
| SPI08N80C3 Datasheet PDF : 0 Pages | |||
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
SPI08N80C3
Value
Unit
8
A
24
4
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10s
min.
Values
typ.
Unit
max.
-
-
1.2 K/W
-
-
62
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
800
V (BR)DS V GS=0 V, I D=8 A
-
V GS(th) V DS=V GS, I D=0.47 mA 2.1
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
V DS=800 V, V GS=0 V,
T j=150 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on)
V GS=10 V, I D=5.1 A,
T j=25 °C
-
V GS=10 V, I D=5.1 A,
T j=150 °C
-
RG
f =1 MHz, open drain
-
-
-V
870
-
3
3.9
-
20 µA
100
-
-
100 nA
0.56 0.65 Ω
1.5
-
1.2
-Ω
Rev. 2.9
page 2
2008-10-15
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