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IRF1405ZSPBF View Datasheet(PDF) - International Rectifier

Part NameIRF1405ZSPBF IR
International Rectifier IR
DescriptionHEXFET® Power MOSFET
IRF1405ZSPBF Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF1405Z/S/LPbF
10000
1000
Duty Cycle = Single Pulse
100
0.01
0.05
10
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-01
300
TOP
Single Pulse
BOTTOM 10% Duty Cycle
250
ID = 75A
200
150
100
50
0
25
50
75
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
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