025N10N View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
025N10N Datasheet PDF : 9 Pages
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IPB025N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
V GS=0 V, V DS=50 V,
f =1 MHz
-
11100 14800 pF
-
1940 2580
-
69
-
t d(on)
-
34
- ns
tr
V DD=50 V, V GS=10 V,
-
58
-
t d(off)
I D=100 A, R G=1.6 Ω
-
84
-
tf
-
28
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
Q gd
-
Q sw
V DD=50 V, I D=100 A,
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=50 V, V GS=0 V
-
48
64 nC
27
-
42
-
155
206
4.3
-V
205
273 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=100 A,
T j=25 °C
t rr
V R=50 V, I F=100A ,
Q rr
di F/dt =100 A/µs
-
-
180 A
-
-
720
-
1
1.2 V
-
86
- ns
-
232
- nC
4) See figure 16 for gate charge parameter definition
Rev. 2.03
page 3
2009-12-11
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