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SPI15N65C3XKSA1 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
SPI15N65C3XKSA1
Infineon
Infineon Technologies Infineon
SPI15N65C3XKSA1 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse current3)
Symbol Conditions
IS
I S,pulse
T C=25 °C
SPI15N65C3
Value
Unit
15
A
45
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
Values
Unit
min. typ. max.
-
-
0.8 K/W
-
-
62
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
650
V GS(th)
V DS=V GS,
I D=0.675 mA
2.1
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
V DS=600 V, V GS=0 V,
T j=150 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on)
V GS=10 V, I D=9.4 A,
T j=25 °C
-
V GS=10 V, I D=9.4 A,
T j=150 °C
-
RG
f =1 MHz, open drain
-
-
3
0.5
25
-
0.25
0.68
1.4
-V
3.9
25 µA
-
100 nA
0.28
-
-
Rev. 2.0
page 2
2007-09-10
 

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