2SJ494
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
120
80
VGS = –4 V
40
VGS = –10 V
0
ID = –10 A
–50
0
50 100 150
Tch - Channel Temperature - ˚C
10 000
1 000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
10
1
–0.1
–1
–10
–100
IF - Diode Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100
VGS = –4 V
Pulsed
–10
VGS = 0
–1
–0.1
0
–1.0
–2.0
–3.0
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
td(off)
tf
100
tr
10
td(on)
1
–0.1
VDD = –30 V
VGS = –10 V
RG = 10 Ω
–1
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–80
ID = –20 A
–14
VGS
–60
–12
–10
VDD = –48 V
–40
–24 V
–12 V
–8
–6
–20
–4
–2
VDS
0
0
20
40
60
80
QG - Gate Charge - nC
5