1PS76SB10,135 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
1PS76SB10,135 Datasheet PDF : 8 Pages
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NXP Semiconductors
1PS76SB10
Schottky barrier single diode
10. Characteristics
Table 7.
Symbol
VF
Characteristics
Parameter
forward voltage
IR
reverse current
Cd
diode capacitance
Conditions
IF = 0.1 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
IF = 1 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
IF = 10 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
IF = 30 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
IF = 100 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
VR = 1 V; f = 1 MHz; Tamb = 25 °C
103
IF
(mA)
102
006aac829
(3)
(1)
(2)
103
IR
(µA)
102
10
10
(1) (2) (3)
1
1
Min Typ Max Unit
-
-
240 mV
-
-
320 mV
-
-
400 mV
-
-
500 mV
-
-
800 mV
-
-
2
µA
-
(1)
-
10
pF
aaa-004515
(2)
(3)
10-1
0.0
0.4
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
0.8
1.2
VF (V)
Fig. 1. Forward current as a function of forward
voltage; typical values
10-1
0
10
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
20
30
VR (V)
Fig. 2. Reverse current as a function of reverse
voltage; typical values
1PS76SB10
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2012
© NXP B.V. 2012. All rights reserved
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