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Part Name
Description
2N06L11 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
2N06L11
OptiMOS® Power-Transistor
Infineon Technologies
2N06L11 Datasheet PDF : 0 Pages
1 Power dissipation
P
tot
=
f
(
T
C
)
parameter:
V
GS
≥
4 V
SPP80N06S2L-11
170
W
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
°C
190
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
3
SPP80N06S2L-11
A
t
p
= 13.0µs
SPP80N06S2L-11
SPB80N06S2L-11
2 Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V
90
SPP80N06S2L-11
A
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
°C
190
T
C
4 Max. transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
1
SPP80N06S2L-11
K/W
10
0
10
2
10
1
10
0
10
-1
10
0
100 µs
1 ms
10
-1
10
-2
10
-3
10
-4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
V
10
2
V
DS
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
Page 4
2003-05-09
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