SPI12N50C3 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
| SPI12N50C3 Datasheet PDF : 0 Pages | |||
SPP12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
Symbol
dv/dt
Value
50
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
3.8
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11.6A
-
600
breakdown voltage
-V
-
Gate threshold voltage
VGS(th) ID=500µA, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current IDSS
VDS=500V, VGS=0V,
µA
Tj=25°C
-
0.1
1
Tj=150°C
-
-
100
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=7A
Tj=25°C
Tj=150°C
-
- 100 nA
Ω
- 0.34 0.38
- 0.92 -
Gate input resistance
RG
f=1MHz, open drain
-
1.4
-
Rev. 3.1
Page 2
2009-11-30
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