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FCH110N65F_F155 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FCH110N65F_F155 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
VGS = 10.0V
100
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.3
1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
0.15
VGS = 10V
0.10
0.05
0
VGS = 20V
*Note: TC = 25oC
20
40
60
80
100
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
100
Coss
*Note:
10 1. VGS = 0V
2. f = 1MHz
Crss
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
100
660
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
200
*Notes:
100 1. VDS = 20V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
1
3
4
5
6
7
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
10
150oC
1
25oC
0.1
0.01
0.001
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.3 0.6 0.9 1.2 1.5 1.8
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 17.5A
8
VDS = 130V
VDS = 325V
6
VDS = 520V
4
2
0
0
20
40
60
80
100
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
3
FCH110N65F Rev. C2
www.fairchildsemi.com
 

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