BR93LL46F View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
BR93LL46F Datasheet PDF : 11 Pages
| |||
Memory ICs
1,024-Bit Serial Electrically Erasable PROM
BR93LL46F / BR93LL46FV
•Features
• Low power CMOS technology
• 64 × 16 bit configuration
• 1.8V to 4.0V operation
• Low power dissipation
– 0.5mA (typ.) active current
– 0.4µA (typ.) standby current
• Auto increment for efficient data dump
• Automatic erase-before-write
• Hardware and software write protection
– Defaults to write-disabled state at power up
– Software instructions for write-enable / disable
– Vcc lockout inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B packages
• Device status signal during write cycle
• 100,000 ERASE / WRITE cycles
• 10 years Data Retention
•Pin assignments
N.C. 1
8 N.C.
VCC 2
7 GND
BR93LL46F
BR93LL46FV
CS 3
6 DO
SK 4
5 DI
(SOP8 / SSOP-B8)
•Pin descriptions
Pin Name
Function
N.C.
VCC
CS
SK
DI
DO
GND
N.C.
Not connected
Power supply
Chip select input
Serial clock input
Start bit, operating code, address, and
serial data input
Serial data output, READY / BUSY
internal status display output
Ground
Not connected
•Overview
The BR93LC46F and BR93LL46FV are CMOS serial input / output-type memory circuits (EEPROMs) that can be
programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed indi-
vidually and data read from it and written to it. Operation control is performed using five types of commands. The
commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write
operation, the internal status signal (READY or BUSY) can be output from the DO pin.
1
|
|
Share Link: 