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IRG4PSH71KD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PSH71KD UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE) IR
International Rectifier IR
IRG4PSH71KD Datasheet PDF : 10 Pages
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IRG4PSH71KD
40 RG = 5.0
T J = 150° C
VCC = 800V
VGE = 15V
30
20
10
0
20
40
60
80
100
I C, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
1000
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
1
1
10
100
1000
10000
VCE, Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
100
TJ = 150°C
TJ = 125°C
TJ = 25°C
10
1
0.0
2.0
4.0
6.0
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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