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IRG4PSH71KD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PSH71KD UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE) IR
International Rectifier IR
IRG4PSH71KD Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
40
30
S qua re wave:
20
60% of rated
v olta ge
I
10
Ideal diodes
0
0.1
IRG4PSH71KD
F or b oth:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 58 W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
TJ = 150 °C
10
TJ = 25 °C
VGE = 15V
80µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 °C
10
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
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