TS912AIYDT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TS912AIYDT Datasheet PDF : 18 Pages
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Electrical characteristics
TS912
Table 5.
VCC+ = 10V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25°C (unless otherwise
specified)
Symbol
Parameter
Min. Typ. Max. Unit
Vio
ΔVio
Iio
Iib
ICC
CMR
SVR
Avd
VOH
VOL
Io
GBP
Input offset voltage (Vic = Vo = VCC/2)
TS912
TS912A
TS912B
Tmin ≤ Tamb ≤ Tmax
TS912
TS912A
TS912B
Input offset voltage drift
Input offset current (1)
Tmin ≤ Tamb ≤ Tmax
Input bias current (1)
Tmin ≤ Tamb ≤ Tmax
Supply current (per amplifier, AVCL = 1, no load)
Tmin ≤ Tamb ≤ Tmax
Common mode rejection ratio
Vic = 3 to 7V, Vo = 5V
Vic = 0 to 10V, Vo = 5V
Supply voltage rejection ratio (VCC+ = 5 to 10V, Vo = VCC/2)
Large signal voltage gain (RL = 10kΩ, Vo = 2.5V to 7.5V)
Tmin ≤ Tamb ≤ Tmax
High level output voltage (Vid = 1V)
RL = 100kΩ
RL = 10kΩ
RL = 600Ω
RL = 100Ω
Tmin ≤ Tamb ≤ Tmax
RL = 10kΩ
RL = 600Ω
Low level output voltage (Vid = -1V)
RL = 100kΩ
RL = 10kΩ
RL = 600Ω
RL = 100Ω
Tmin ≤ Tamb ≤ Tmax
RL = 10kΩ
RL = 600Ω
Output short circuit current (Vid = ±1V)
Source (Vo = VCC-)
Sink (Vo = VCC+)
Gain bandwidth product
(AVCL = 100, RL = 10kΩ, CL = 100pF, f = 100kHz)
10
5
2
mV
12
7
3
5
μV/°C
1
100
200
pA
1
150
300
pA
400 600
700
μA
60
90
50
75
60
90
15
50
10
dB
dB
V/mV
9.95
9.85 9.95
9
9.35
7.8
V
9.8
8.8
50
50 150
650 800
2300
mV
150
900
45
65
50
75
1.4
mA
MHz
8/18
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