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2SC1162 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
Manufacturer
2SC1162
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SC1162 Datasheet PDF : 5 Pages
1 2 3 4 5
2SC1162
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 35
voltage
Collector to emitter breakdown V(BR)CEO 35
voltage
Emitter to base breakdown
V(BR)EBO
5
voltage
Collector cutoff current
DC current transfer ratio
I CBO
hFE*1
60
hFE
20
Base to emitter voltage
VBE
0.93
Collector to emitter saturation VCE(sat)
0.5
voltage
Gain bandwidth product
fT
180
Note: 1. The 2SC1162 is grouped by hFE as follows.
Max
20
320
1.5
1.0
Unit
V
V
V
µA
V
V
MHz
Test conditions
IC = 1 mA, IE = 0
IC = 10 mA, RBE =
IE = 1 mA, IC = 0
VCB = 35 V, IE = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.5 A
(pulse test)
VCE = 2 V, IC = 1.5 A
(pulse test)
IC = 2 A, IB = 0.2 A (pulse test)
VCE = 2 V, IC = 0.2 A
B
60 to 120
C
D
100 to 200 160 to 320
Maximum Collector Dissipation Curve
0.8
0.75
0.6
0.4
0.2
0
50
100
150
200
Ambient temperature Ta (°C)
Area of Safe Operation
5
IC(max)(DC Operation)
TC = 25°C
2
1.0
0.5
0.2
0.1
1
2
5 10 20
50
Collector to emitter voltage VCE (V)
2
 

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