STD14NM50N View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD14NM50N Datasheet PDF : 26 Pages
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STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D2PAK, DPAK
I2PAK, TO-220
Unit
TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
500
± 25
12
8
48
90
15
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
- 55 to 150
150
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 12 A, di/dt ≤ 400 A/s,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
12 (1)
8 (1)
48 (1)
25
2500
V
V
A
A
A
W
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK DPAK TO-220FP I²PAK TO-220
Rthj-case
Thermal resistance junction-case
max
Rthj-amb
Thermal resistance junction-
ambient max
Rthj-pcb(1)
Thermal resistance junction-pcb
max
1.39
30
50
5
1.39
62.5
°C/W
°C/W
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Symbol
Avalanche data
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Value
Unit
4
A
172
mJ
Doc ID 16832 Rev 6
3/26
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