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M48T128Y-85PM1TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M48T128Y-85PM1TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48T128Y-85PM1TR Datasheet PDF : 22 Pages
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M48T128Y, M48T128V*
Data Retention Mode
With valid VCC applied, the M48T128Y/V operates
as a conventional BYTEWIDEâ„¢ static RAM.
Should the supply voltage decay, the RAM will au-
tomatically power-fail deselect, write protecting it-
self when VCC falls within the VPFD (max), VPFD
(min) window. All outputs become high imped-
ance, and all inputs are treated as “Don't care.â€
Note: A power failure during a WRITE cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's con-
tent. At voltages below VPFD (min), the user can be
assured the memory will be in a write protected
state, provided the VCC fall time is not less than tF.
The M48T128Y/V may respond to transient noise
spikes on VCC that reach into the deselect window
during the time the device is sampling VCC. There-
fore, decoupling of the power supply lines is rec-
ommended.
When VCC drops below VSO, the control circuit
switches power to the internal battery, preserving
data and powering the clock. The internal energy
source will maintain data in the M48T128Y/V for
an accumulated period of at least 10 years at room
temperature. As system power rises above VSO,
the battery is disconnected, and the power supply
is switched to external VCC. Deselect continues for
tREC after VCC reaches VPFD (max).
10/22
 

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