IRL1404ZSPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRL1404ZSPBF Datasheet PDF : 12 Pages
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Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
PD - 95446B
IRL1404ZPbF
IRL1404ZSPbF
IRL1404ZLPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.1mΩ
G
ID = 120A
S
TO-220AB
D2Pak
TO-262
IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
™ Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
i Case-to-Sink, Flat, Greased Surface
i Junction-to-Ambient
jà Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
k 200
k 140
k 120
790
230
1.5
± 16
220
490
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
06/25/12
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