IRL3103D1S View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRL3103D1S Datasheet PDF : 7 Pages
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IRL3103D1S
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Ciss
Input Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.014
––– ––– 0.019
Ω
VGS = 10V, ID = 34A
VGS = 4.5V, ID = 28A
1.0 ––– ––– V VDS = VGS, ID = 250µA
23 ––– ––– S VDS = 25V, ID = 34A
––– ––– 0.10 mA VDS = 30V, VGS = 0V
––– ––– 22
VDS = 24V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 43
ID = 32A
––– ––– 14 nC VDS = 24V
––– ––– 23
VGS = 4.5V, See Fig. 6
––– 9.0 –––
VDD = 15V
––– 210 ––– ns ID = 32A
––– 20 –––
RG = 3.4Ω, VGS =4.5V
––– 54 –––
RD = 0.43 Ω,
––– 7.5 –––
Between lead,
nH and center of die contact
––– 1900 –––
VGS = 0V
––– 810 –––
VDS = 25V
––– 240 –––
ƒ = 1.0MHz, See Fig. 5
––– 3500 –––
VGS = 0V, VDS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
IF (AV)
ISM
VSD1
VSD2
trr
Qrr
ton
Parameter
( Schottky)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.0
A showing the
integral reverse
G
––– ––– 220
S
p-n junction and Schottky diode.
––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V
––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V
––– 51 77
––– 49 73
ns TJ = 25°C, IF = 32A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3103D1 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
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