IRF1405S/LPbF
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance ย
Min. Typ. Max. Units
Conditions
55 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.057 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA
โโโ 4.6 5.3 mโฆ VGS = 10V, ID = 101A ย
2.0 โโโ 4.0
69 โโโ โโโ
โโโ โโโ 20
โโโ โโโ 250
V VDS = 10V, ID = 250ยตA
S VDS = 25V, ID = 110A
ยตA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 200 nA VGS = 20V
โโโ โโโ -200
VGS = -20V
โโโ 170 260
โโโ 44 66
โโโ 62 93
โโโ 13 โโโ
ID = 101A
nC VDS = 44V
VGS = 10Vย
VDD = 38V
โโโ 190 โโโ ns ID = 110A
โโโ 130 โโโ
RG = 1.1โฆ
โโโ 110 โโโ
VGS = 10V ย
Between lead,
D
โโโ 4.5 โโโ
6mm (0.25in.)
nH
from package
G
โโโ 7.5 โโโ
and center of die contact
S
โโโ 5480 โโโ
VGS = 0V
โโโ 1210 โโโ pF VDS = 25V
โโโ 280 โโโ
ฦ = 1.0MHz, See Fig. 5
โโโ 5210 โโโ
โโโ 900 โโโ
โโโ 1500 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 44V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 131ย
A
showing the
integral reverse
G
โโโ โโโ 680
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 101A, VGS = 0V ย
โโโ 88 130 ns TJ = 25ยฐC, IF = 101A
โโโ 250 380 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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