IRF1404ZS_L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ฮV(BR)DSS/ฮTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 โโโ โโโ
โโโ 0.033 โโโ
โโโ 2.7 3.7
V VGS = 0V, ID = 250ฮผA
e V/ยฐC Reference to 25ยฐC, ID = 1mA
mฮฉ VGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0 โโโ 4.0 V VDS = VGS, ID = 250ฮผA
gfs
Forward Transconductance
170 โโโ โโโ V VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
โโโ โโโ 20 ฮผA VDS = 40V, VGS = 0V
โโโ โโโ 250
VDS = 40V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โโโ โโโ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
โโโ โโโ -200
VGS = -20V
Qg
Total Gate Charge
โโโ 100 150
ID = 75A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
โโโ
โโโ
31
42
โโโ
โโโ
e nC VDS = 32V
VGS = 10V
td(on)
Turn-On Delay Time
โโโ 18 โโโ
VDD = 20V
tr
Rise Time
โโโ 110 โโโ
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
โโโ
โโโ
36
58
โโโ
โโโ
e ns RG = 3.0 ฮฉ
VGS = 10V
LD
Internal Drain Inductance
โโโ 4.5 โโโ
Between lead,
LS
Internal Source Inductance
nH 6mm (0.25in.)
โโโ 7.5 โโโ
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
โโโ 4340 โโโ
โโโ 1030 โโโ
โโโ 550 โโโ
โโโ 3300 โโโ
โโโ 920 โโโ
โโโ 1350 โโโ
and center of die contact
VGS = 0V
VDS = 25V
pF ฦ = 1.0MHz
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
f VGS = 0V, VDS = 32V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
โโโ โโโ 75
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
รย (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
โโโ โโโ 750
A showing the
integral reverse
โโโ โโโ 1.3
โโโ 28 42
โโโ 34 51
e p-n junction diode.
V TJ = 25ยฐC, IS = 75A, VGS = 0V
e ns TJ = 25ยฐC, IF = 75A, VDD = 20V
nC di/dt = 100A/ฮผs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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