IRFP450N
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.59 โโโ
V/ยฐC Reference to 25ยฐC, ID = 1mA
โโโ โโโ 0.37 โฆ VGS = 10V, ID = 8.4A ย
3.0 โโโ 5.0 V VDS = VGS, ID = 250ยตA
โโโ โโโ 25
โโโ โโโ 250
ยตA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125ยฐC
โโโ โโโ 100 nA VGS = 30V
โโโ โโโ -100
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
7.9 โโโ โโโ
โโโ โโโ 77
S VDS = 50V, ID = 8.4A
ID = 14A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
โโโ โโโ 26
โโโ โโโ 34
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 ย
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
โโโ 20 โโโ
VDD = 250V
โโโ 63 โโโ ns ID = 14A
โโโ 29 โโโ
RG = 6.2โฆ
โโโ 25 โโโ
VGS = 10V,See Fig. 10 ย
Ciss
Input Capacitance
Coss
Output Capacitance
โโโ 2260 โโโ
โโโ 210 โโโ
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
โโโ 14 โโโ pF ฦ = 1.0MHz, See Fig. 5
โโโ 2410 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
โโโ 59 โโโ
โโโ 110 โโโ
VGS = 0V, VDS = 400V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ย
Parameter
EAS
Single Pulse Avalanche Energyย
IAR
Avalanche Currentย
EAR
Repetitive Avalanche Energyย
Thermal Resistance
Typ.
โโโ
โโโ
โโโ
Max.
170
14
20
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RฮธJC
Junction-to-Case
RฮธCS
Case-to-Sink, Flat, Greased Surface
RฮธJA
Junction-to-Ambient
Diode Characteristics
โโโ
0.64
0.24
โโโ
ยฐC/W
โโโ
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
MOSFET symbol
D
โโโ โโโ 14
A showing the
integral reverse
G
โโโ โโโ 56
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
โโโ โโโ 1.4
โโโ 430 650
โโโ 3.7 5.6
V TJ = 25ยฐC, IS = 14A, VGS = 0V ย
ns TJ = 25ยฐC, IF = 14A
ยตC di/dt = 100A/ยตs ย
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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