APT50M50L2FLL View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APT50M50L2FLL Datasheet PDF : 5 Pages
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DYNAMIC CHARACTERISTICS
APT50M50L2FLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 89A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
ID = 89A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 333V, VGS = 15V
ID = 89A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 333V VGS = 15V
ID = 89A, RG = 3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
10550
2060
pF
105
200
50
nC
105
24
22
ns
56
8
1490
1650
µJ
2105
1835
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -89A)
dv/dt
Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -89A, di/dt = 100A/µs)
Reverse Recovery Charge
Qrr
(IS = -89A, di/dt = 100A/µs)
Peak Recovery Current
IRRM
(IS = -89A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
89 Amps
356
1.3 Volts
15 V/ns
300
ns
600
2.6
µC
10
17
Amps
34
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.14
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.81mH, RG = 25Ω, Peak IL = 89A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -89A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.14
0.9
0.12
0.10
0.7
0.08
0.06
0.04
0.02
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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