2SC3356 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SC3356

NPN Silicon RF Transistor

Renesas Electronics 

PreliminaryData Sheet

2SC3356

R09DS0021EJ0300

NPN Silicon RF Transistor

Rev.3.00

NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

Jun 28, 2011

FEATURES

• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

<R> ORDERING INFORMATION

Part Number

2SC3356

2SC3356-T1B

Order Number

2SC3356-A

2SC3356-T1B-A

Package

Quantity

3-pin Minimold 50 pcs (Non reel)

(Pb-Free)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

20

V

Collector to Emitter Voltage

VCEO

12

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

Total Power Dissipation

IC

P Note

tot

100

200

mA

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free air

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0021EJ0300 Rev.3.00

Jun 28, 2011

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