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KSE350 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
KSE350
Fairchild
Fairchild Semiconductor Fairchild
KSE350 Datasheet PDF : 4 Pages
1 2 3 4
KSE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to KSE340
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IC = - 1mA, IB = 0
VCB = - 300V, IE = 0
VBE = - 3V, IC = 0
VCE = - 10V, IC = - 50mA
Value
- 300
- 300
-5
- 500
20
150
- 65 ~ 150
Units
V
V
V
mA
W
°C
°C
Min.
-300
30
Max.
-100
-100
240
Units
V
µA
µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
 

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