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PZTA42T1D View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
PZTA42T1D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ON Semiconductort
High Voltage Transistor
Surface Mount
NPN Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ TA = 25°C(1)
Storage Temperature Range
Junction Temperature
DEVICE MARKING
P1D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient(1)
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
RθJA
Value
300
300
6.0
500
1.5
–65 to +150
150
Max
83.3
Unit
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
Unit
°C/W
PZTA42T1
ON Semiconductor Preferred Device
SOT–223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
COLLECTOR 2,4
BASE
1
EMITTER 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
0.1
µAdc
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
0.1
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300 µs, δ = 0.02.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 4
Publication Order Number:
PZTA42T1/D
 

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