M58CR032C View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58CR032C

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

STMicroelectronics 

M58CR032C, M58CR032D

SUMMARY DESCRIPTION

The M58CR032 is a 32 Mbit (2Mbit x16) non-vola-

tile Flash memory that may be erased electrically

at block level and programmed in-system on a

Word-by-Word basis using a 1.65V to 2.0V VDD

supply for the circuitry and a 1.65V to 3.3V VDDQ

supply for the Input/Output pins. An optional 12V

VPP power supply is provided to speed up custom-

er programming. The VPP pin can also be used as

a control pin to provide absolute protection against

program or erase.

The device features an asymmetrical block archi-

tecture. M58CR032 has an array of 71 blocks and

is divided into two banks, Banks A and B, provid-

ing Dual Bank operations. While programming or

erasing in Bank A, read operations are possible in

Bank B or vice versa. Only one bank at a time is

allowed to be in program or erase mode. It is pos-

sible to perform burst reads that cross bank

boundaries. The bank architecture is summarized

in Table 2, and the memory maps are shown in

Figure 4. The Parameter Blocks are located at the

top of the memory address space for the

M58CR032C and at the bottom for the

M58CR032D.

Each block can be erased separately. Erase can

be suspended, in order to perform either read or

program in any other block, and then resumed.

Program can be suspended to read data in any

other block and then resumed. Each block can be

programmed and erased over 100,000 cycles.

Program and Erase commands are written to the

Command Interface of the memory. An on-chip

Program/Erase Controller takes care of the tim-

ings necessary for program and erase operations.

The end of a program or erase operation can be

detected and any error conditions identified in the

Status Register. The command set required to

control the memory is consistent with JEDEC stan-

dards.

The device supports synchronous burst read and

asynchronous read from all blocks of the memory

array; at power-up the device is configured for

page mode read. In synchronous burst mode, data

is output on each clock cycle at frequencies of up

to 54MHz.

The M58CR032 features an instant, individual

block locking scheme that allows any block to be

locked or unlocked with no latency, enabling in-

stant code and data protection. All blocks have

three levels of protection. They can be locked and

locked-down individually preventing any acciden-

tal programming or erasure. There is an additional

hardware protection against program and erase.

When VPP ≤ VPPLK all blocks are protected against

program or erase. All blocks are locked at Power

Up.

The device includes a 128 bit Protection Register

and a Security Block to increase the protection of

a system’s design. The Protection Register is di-

vided into two 64 bit segments. The first segment

contains a unique device number written by ST,

while the second one is one-time-programmable

by the user. The user programmable segment can

be permanently protected. The Security Block, pa-

rameter block 0, can be permanently protected by

the user. Figure 5, shows the Security Block and

Protection Register Memory Map.

The memory is offered in a TFBGA56, 0.75 mm

ball pitch package and is supplied with all the bits

erased (set to ’1’).

6/63

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