IRF1407S View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF1407S Datasheet PDF : 11 Pages
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IRF1407S/IRF1407L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
75 ––– ––– V
––– 0.09 ––– V/°C
––– ––– 0.0078 Ω
2.0 ––– 4.0 V
74 ––– ––– S
––– ––– 20 µA
––– ––– 250
––– ––– 200
nA
––– ––– -200
––– 160 250
––– 35 52 nC
––– 54 81
––– 11 –––
––– 150 –––
ns
––– 150 –––
––– 140 –––
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– 4.5 –––
nH
––– 7.5 –––
Ciss
Input Capacitance
––– 5600 –––
Coss
Output Capacitance
––– 890 ––– pF
Crss
Reverse Transfer Capacitance
––– 190 –––
Coss
Output Capacitance
––– 5800 –––
Coss
Output Capacitance
––– 560 –––
Coss eff. Effective Output Capacitance U
––– 1100 –––
Source-Drain Ratings and Characteristics
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA X
VGS = 10V, ID = 78A T
VDS = 10V, ID = 250µA
VDS = 25V, ID = 78A X
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 78A
VDS = 60V
VGS = 10VTX
VDD = 38V
ID = 78A
RG = 2.5Ω
VGS = 10V TX
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0KHz, See Fig. 5 X
VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
VGS = 0V, VDS = 60V, ƒ = 1.0KHz
VGS = 0V, VDS = 0V to 60V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Q
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 100V
A
showing the
integral reverse
G
––– ––– 520
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0VT
––– 110 170 ns TJ = 25°C, IF = 78A
––– 390 590 nC di/dt = 100A/µsTX
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting TJ = 25°C, L = 0.13mH
RG = 25Ω, IAS = 78A. (See Figure 12).
S ISD ≤ 78A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
U Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
VCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
XUses IRF1407 data and test conditions.
2
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